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Samsung Semiconductor K4S561632D-TC75 DRAM

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

In Stock ActiveSamsung SemiconductorTSOPRoHS
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K4S561632D-TC75
Part Number (MPN)
K4S561632D-TC75
Detailed Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Package
TSOP
Key Features
Package / Case: TSOP; Supply Voltage: 3.3V
Lifecycle Status
Active
RoHS State
No
Datasheet
PDF K4S561632D-TC75 Datasheet
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Technical Specifications

Samsung Semiconductor K4S561632D-TC75 DRAM technical specifications.

General

RoHS
No
Package / Case
TSOP
Operating Temperature
0°C ~ 70°C
Supply Voltage
3.3V
Address Bus Width
15b
Density
256Mb
Max Frequency
133MHz

Alternate Parts Comparison (K4S561632D-TC75 vs K4H511638C-UCB3 vs K4H511638D-UCCC vs K4H561638F-UCB3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTSOPTSOPTSOPTSOP
RoHSNoYesYesYes
Operating Temperature0°C ~ 70°C------
Supply Voltage3.3V------
Address Bus Width15b------
Density256Mb------
Max Frequency133MHz------
Frequency--166MHz200MHz166MHz
Lead Free--Lead FreeLead FreeLead Free
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