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Samsung Semiconductor K4S161622D-TC60 DRAM

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

7,000 ActiveSamsung Semiconductor$7.22RoHS
K4S161622D-TC60 - No Image Available

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K4S161622D-TC60
Part Number (MPN)
K4S161622D-TC60
Detailed Description
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Lifecycle Status
Active
RoHS State
No
Datasheet
PDF K4S161622D-TC60 Datasheet
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Technical Specifications

Samsung Semiconductor K4S161622D-TC60 DRAM technical specifications.

General

RoHS
No
Number of Pins
50
Operating Temperature
0 ~ 70
Terminal Position
DUAL
Jedec Package Code
R-PDSO-G50
Width
10.16
Length
20.95
Number of Functions
1
Temperature Grade
COMMERCIAL
Supply Voltage Nom Vsup
3.3

Alternate Parts Comparison (K4S161622D-TC60 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate Parts
Operating Temperature0 ~ 70---25 ~ 85
Number of Pins50--54
RoHSNo--Yes
Access Time Max5.5--5.4
Clock Frequency Max Fclk166--133
IO TypeCOMMON--COMMON
Jedec Package CodeR-PDSO-G50--R-PBGA-B54
Length20.95--11
Memory IC TypeSYNCHRONOUS DRAM--SYNCHRONOUS DRAM
Military SpecFalse--False
Number of Functions1--1
Number of Ports1--1
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