Samsung Semiconductor K4N56163QI-ZC25 DRAM
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4N56163QI-ZC25
Detailed Description
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84,
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4N56163QI-ZC25 Datasheet
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Technical Specifications
Samsung Semiconductor K4N56163QI-ZC25 DRAM technical specifications.
General
RoHS
Yes
Number of Pins
84
Operating Temperature
0 ~ 95
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B84
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.8
Supply Current Max
0.26
Number of Words
16777216
Number of Words Code
16000000
Alternate Parts Comparison (K4N56163QI-ZC25 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Operating Temperature | 0 ~ 95 | -- | -25 ~ 85 |
| Number of Pins | 84 | -- | 54 |
| RoHS | Yes | -- | Yes |
| Access Time Max | 0.4 | -- | 5.4 |
| Clock Frequency Max Fclk | 400 | -- | 133 |
| IO Type | COMMON | -- | COMMON |
| Jedec Package Code | R-PBGA-B84 | -- | R-PBGA-B54 |
| Memory IC Type | DDR DRAM | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | False |
| Number of Words | 16777216 | -- | 16777216 |
| Number of Words Code | 16000000 | -- | 16000000 |
| Standby Current Max | 0.01 | -- | 0.001 |
| Action |
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