Samsung Semiconductor K4N51163QE-ZC25 DRAM
Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4N51163QE-ZC25
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
K4N51163QE-ZC25 Datasheet
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Technical Specifications
Samsung Semiconductor K4N51163QE-ZC25 DRAM technical specifications.
General
Max Operating Temp
85
Number of Pins
84
Min Operating Temp
0
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B84
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.8
Supply Current Max
0.28
Number of Words
33554432
Number of Words Code
32000000
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