Samsung Semiconductor K4M56163LG-BN75 DRAM
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4M56163LG-BN75
Detailed Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4M56163LG-BN75 Datasheet
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Technical Specifications
Samsung Semiconductor K4M56163LG-BN75 DRAM technical specifications.
General
RoHS
Yes
Number of Pins
54
Operating Temperature
-25 ~ 85
Terminal Position
BOTTOM
Jedec Package Code
S-PBGA-B54
Temperature Grade
OTHER
Supply Voltage Nom Vsup
2.5
Supply Current Max
0.12
Number of Words
16777216
Number of Words Code
16000000
Alternate Parts Comparison (K4M56163LG-BN75 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -25 ~ 85 | -- | 0 ~ 95 | -25 ~ 85 |
| Number of Pins | 54 | -- | 78 | 54 |
| RoHS | Yes | -- | Compliant | Yes |
| Access Time Max | 5.4 | -- | -- | 5.4 |
| Clock Frequency Max Fclk | 133 | -- | -- | 133 |
| IO Type | COMMON | -- | -- | COMMON |
| Jedec Package Code | S-PBGA-B54 | -- | -- | R-PBGA-B54 |
| Lead Free | Yes | -- | -- | Yes |
| Memory IC Type | SYNCHRONOUS DRAM | -- | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | -- | False |
| Number of Words | 16777216 | -- | -- | 16777216 |
| Number of Words Code | 16000000 | -- | -- | 16000000 |
| Action |
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