Samsung Semiconductor K4H560838E-TCB3 DRAM
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4H560838E-TCB3
Detailed Description
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Lifecycle Status
Active
RoHS State
No
Datasheet
K4H560838E-TCB3 Datasheet
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Technical Specifications
Samsung Semiconductor K4H560838E-TCB3 DRAM technical specifications.
General
RoHS
No
Number of Pins
66
Operating Temperature
0 ~ 70
Terminal Position
DUAL
Jedec Package Code
R-PDSO-G66
Width
10.16
Length
22.22
Number of Functions
1
Temperature Grade
COMMERCIAL
Supply Voltage Nom Vsup
2.5
Alternate Parts Comparison (K4H560838E-TCB3 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Operating Temperature | 0 ~ 70 | -- | -25 ~ 85 |
| Number of Pins | 66 | -- | 54 |
| RoHS | No | -- | Yes |
| Access Time Max | 0.7 | -- | 5.4 |
| Clock Frequency Max Fclk | 166 | -- | 133 |
| IO Type | COMMON | -- | COMMON |
| Jedec Package Code | R-PDSO-G66 | -- | R-PBGA-B54 |
| Lead Free | No | -- | Yes |
| Length | 22.22 | -- | 11 |
| Memory IC Type | DDR DRAM | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | False |
| Number of Functions | 1 | -- | 1 |
| Action |
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