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Samsung Semiconductor K4H510838B-TCB3 DRAM

DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

In Stock ActiveSamsung SemiconductorRoHS
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K4H510838B-TCB3
Part Number (MPN)
K4H510838B-TCB3
Detailed Description
DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Key Features
Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
No
Datasheet
PDF K4H510838B-TCB3 Datasheet
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Technical Specifications

Samsung Semiconductor K4H510838B-TCB3 DRAM technical specifications.

General

RoHS
No
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C
Access Time Max
0.7ns
Address Bus Width
15b
Density
512Mb
Max Frequency
333MHz

Alternate Parts Comparison (K4H510838B-TCB3 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate Parts
Operating Temperature0°C ~ 70°C---25 ~ 85
RoHSNo--Yes
Access Time Max0.7ns--5.4
Mounting TypeSurface Mount----
Address Bus Width15b----
Density512Mb----
Max Frequency333MHz----
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