Samsung Semiconductor K4B2G0846C-HCF8 DRAM
DDR DRAM, 256MX8, CMOS, PBGA78,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B2G0846C-HCF8
Detailed Description
DDR DRAM, 256MX8, CMOS, PBGA78,
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4B2G0846C-HCF8 Datasheet
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Technical Specifications
Samsung Semiconductor K4B2G0846C-HCF8 DRAM technical specifications.
General
RoHS
Yes
Number of Pins
78
Operating Temperature
0 ~ 85
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B78
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.5
Supply Current Max
0.17
Number of Words
268435456
Number of Words Code
256000000
Alternate Parts Comparison (K4B2G0846C-HCF8 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Operating Temperature | 0 ~ 85 | -- | -25 ~ 85 |
| Number of Pins | 78 | -- | 54 |
| RoHS | Yes | -- | Yes |
| Clock Frequency Max Fclk | 533 | -- | 133 |
| IO Type | COMMON | -- | COMMON |
| Jedec Package Code | R-PBGA-B78 | -- | R-PBGA-B54 |
| Memory IC Type | DDR DRAM | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | False |
| Number of Words | 268435456 | -- | 16777216 |
| Number of Words Code | 256000000 | -- | 16000000 |
| Standby Current Max | 0.012 | -- | 0.001 |
| Supply Current Max | 0.17 | -- | 0.12 |
| Action |
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