onsemi SNSS30201MR6T1G BJTs
30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor, TSOP-6, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SNSS30201MR6T1G
Detailed Description
30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor, TSOP-6, 3000-REEL
Package
TSOP-6
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
SNSS30201MR6T1G Datasheet
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Alternate Parts Comparison (SNSS30201MR6T1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -- | -55 °C ~ 150 °C | -55 °C ~ 150 °C | -55 °C ~ 150 °C |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | -- | Production | Production | Production |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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