onsemi MBT3906DW1T1G BJTs
Bipolar Transistor Array, General Purpose, Dual PNP, 40 V, 200 mA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MBT3906DW1T1G
Detailed Description
Bipolar Transistor Array, General Purpose, Dual PNP, 40 V, 200 mA
Package
SOT-363-6
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
MBT3906DW1T1G Datasheet
Quick Jump:
Technical Specifications
onsemi MBT3906DW1T1G BJTs technical specifications.
General
RoHS
Compliant
Number of Pins
6
Packaging
Tape and Reel
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Production
Export Control Classification Number ECCN Code
EAR99
Introduction Date
2001-12-09
Manufacturer Lifecycle Status
ACTIVE
Package
SOT-363-6
Contact Plating
Tin
Alternate Parts Comparison (MBT3906DW1T1G vs MBT3904DW1T1H vs MBT3904DW1T1G vs MBT3904DW1T3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55 °C ~ 150 °C | -- | -- | -- |
| Number of Pins | 6 | -- | -- | -- |
| RoHS | Compliant | -- | -- | -- |
| Lifecycle Status | Production | -- | -- | -- |
| China ROHS | Compliant | -- | -- | -- |
| Collector Base Voltage Vcbo | 40 V | -- | -- | -- |
| Collector Emitter Breakdown Voltage | 40 V | -- | -- | -- |
| Collector Emitter Saturation Voltage | -400 mV | -- | -- | -- |
| Collector Emitter Voltage Vceo | 40 V | -- | -- | -- |
| Contact Plating | Tin | -- | -- | -- |
| Current Rating | -200 mA | -- | -- | -- |
| Element Configuration | Dual | -- | -- | -- |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SMUN5311DW1T1GonsemiSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
