Microchip Technology DN3525N8-G MOSFETs
Power MOSFET, N Channel, 250 V, 360 mA, 6 ohm, SOT-89, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DN3525N8-G
Detailed Description
High-performance Microchip Technology MOSFETs for stable electronic control.
Package
SOT-89
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Microchip Technology DN3525N8-G MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Number of Channels
1
Packaging
Cut Tape
Mounting Type
Surface Mount
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Production
Projected Eol Date
2034-05-05
Country of Assembly
China, Taiwan
Country of Fabrication
United States of America
Alternate Parts Comparison (DN3525N8-G vs DN2535N3-G-P003 vs DN2535N5-G vs DN2530N3-G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | -55 °C ~ 150 °C | -- | -- | -- |
| Number of Pins | 3 | -- | -- | -- |
| Number of Channels | 1 | -- | -- | -- |
| RoHS | Compliant | -- | -- | -- |
| Lifecycle Status | Production | -- | -- | -- |
| Ambient Temperature Range High | 150 °C | -- | -- | -- |
| Continuous Drain Current ID | 360 mA | -- | -- | -- |
| Country of Assembly | China, Taiwan | -- | -- | -- |
| Country of Fabrication | United States of America | -- | -- | -- |
| Drain to Source Breakdown Voltage | 250 V | -- | -- | -- |
| Drain to Source Resistance | 6 Ω | -- | -- | -- |
| Action |
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