Infineon Technologies CY62157H30-55ZSXET Memory Integrated Circuit
ASYNC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CY62157H30-55ZSXET
Detailed Description
ASYNC
Package
48-TFSOP (0.724", 18.40mm Width)
Key Features
Package / Case: 48-TFSOP (0.724", 18.40mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
CY62157H30-55ZSXET Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies CY62157H30-55ZSXET Memory Integrated Circuit technical specifications.
General
Series
MoBL®
Memory Size
8 Mbit
Package / Case
48-TFSOP
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
2.2V ~ 3.6V
Technology
SRAM - Asynchronous
Memory Type
Volatile
Access Time
55 ns
Memory Format
SRAM
Alternate Parts Comparison (CY62157H30-55ZSXET vs CY7C1360C-200AXCT vs CY7C1361C-133AXI vs CY62167G30-55ZXET)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | MoBL® | CY7C1360C | CY7C1361C | MoBL® |
| Package / Case | 48-TFSOP | 100-LQFP | 100-LQFP | 48-TFSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TA) |
| Supply Voltage | 2.2V ~ 3.6V | 3.135V ~ 3.6V | 3.135V ~ 3.6V | 2.2V ~ 3.6V |
| Memory Size | 8 Mbit | 9M | 9M | 16 Mbit |
| Access Time | 55 ns | 3 ns | 6.5 ns | 55 ns |
| Memory Format | SRAM | SRAM | SRAM | SRAM |
| Memory Interface | Parallel | Parallel | Parallel | Parallel |
| Memory Organization | 512K x 16 | 256K x 36 | 256K x 36 | 2M x 8, 1M x 16 |
| Memory Type | Volatile | Volatile | Volatile | Volatile |
| Technology | SRAM - Asynchronous | SRAM - Synchronous, SDR | SRAM - Synchronous, SDR | SRAM - Asynchronous |
| Action |
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