Infineon Technologies BFR949L3E6327 RF BJT
RF BIPOLAR TRANSISTOR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFR949L3E6327
Detailed Description
Package
SC-101, SOT-883
Key Features
Package / Case: SC-101, SOT-883 | Supplier Device Package: PG-TSLP-3-1 | Transistor Type: NPN | Frequency - Transition: 9GHz | Voltage - Collector Emitter Breakdown (Max): 10V | Current - Collector (Ic) (Max): 50mA | Power - Max: 250mW | Gain: 21.5dB
Lifecycle Status
Active
RoHS State
Not applicable
Datasheet
BFR949L3E6327 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BFR949L3E6327 RF BJT technical specifications.
General
Voltage Collector Emitter Breakdown Max
10V
Transistor Type
NPN
Supplier Device Package
PG-TSLP-3-1
Power Max
250mW
Package / Case
SC-101, SOT-883
Package
Bulk
Operating Temperature
150°C (TJ)
Noise Figure Db Typ F
1dB ~ 2.5dB @ 1GHz
Mounting Type
Surface Mount
Gain
21.5dB
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BFP720ESDH6327Infineon TechnologiesPackage / Case: SC-82A, SOT-343 | Supplier Device Package: PG-SOT343-4-2 | Transistor Type: NPN | Frequency - Transition: 43GHz | Voltage - Collector Emitter Breakdown (Max): 4.7V | Current - Collector (Ic) (Max): 30mA | Power - Max: 100mW | Gain: 11dB ~ 30.5dB
