Infineon Technologies BFR949L3E6327 RF BJT
RF BIPOLAR TRANSISTOR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFR949L3E6327
Detailed Description
RF BIPOLAR TRANSISTOR
Package
SC-101, SOT-883
Lifecycle Status
Active
RoHS State
Not applicable
Datasheet
BFR949L3E6327 Datasheet
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Technical Specifications
Infineon Technologies BFR949L3E6327 RF BJT technical specifications.
General
Package / Case
SC-101, SOT-883
Packaging
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage Collector Emitter Breakdown Max
10V
Transistor Type
NPN
Power Max
250mW
Noise Figure Db Typ F
1dB ~ 2.5dB @ 1GHz
Gain
21.5dB
Frequency Transition
9GHz
Alternate Parts Comparison (BFR949L3E6327 vs BFR93AWH6327XTSA1 vs BFR181WH6327XTSA1 vs BFR360FH6765XTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-101, SOT-883 | -- | -- | -- |
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | 150°C (TJ) | -- | -- | -- |
| Current Collector IC Max | 50mA | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 100 @ 5mA, 6V | -- | -- | -- |
| Frequency Transition | 9GHz | -- | -- | -- |
| Gain | 21.5dB | -- | -- | -- |
| Noise Figure Db Typ F | 1dB ~ 2.5dB @ 1GHz | -- | -- | -- |
| Power Max | 250mW | -- | -- | -- |
| Transistor Type | NPN | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 10V | -- | -- | -- |
| Action |
More Parts in RF BJT
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