Infineon Technologies BFP193E6327HTSA1 RF BJT
TRANSISTOR NPN RF 12V SOT-143
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP193E6327HTSA1
Detailed Description
Package
TO-253-4, TO-253AA
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BFP193E6327HTSA1 RF BJT technical specifications.
General
Source Category
Discrete Semiconductors > Transistors > RF BJT
Voltage Collector Emitter Breakdown Max
12V
Inventory Source
Winsource
Inventory Source File
/Volumes/T7 Shield/电子元器件数据/抓取的数据/Win-Source数据/winsource_未曾下架数据_202605_1.xlsx
Inventory As of
2026-05-16
Source Manufacturer
Infineon Technologies
Source Category
Discrete Semiconductor Products > TRANSISTORS > RF Transistors (BJT)
Stock
18008
Extracted Price
1.1712
Price Formula
winsource min price * 2
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BFP720ESDH6327Infineon TechnologiesPackage / Case: SC-82A, SOT-343 | Supplier Device Package: PG-SOT343-4-2 | Transistor Type: NPN | Frequency - Transition: 43GHz | Voltage - Collector Emitter Breakdown (Max): 4.7V | Current - Collector (Ic) (Max): 30mA | Power - Max: 100mW | Gain: 11dB ~ 30.5dB
