Infineon Technologies BFP193E6327HTSA1 RF BJT
TRANSISTOR NPN RF 12V SOT-143
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP193E6327HTSA1
Detailed Description
Package
TO-253-4, TO-253AA
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
BFP193E6327HTSA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BFP193E6327HTSA1 RF BJT technical specifications.
General
Voltage Collector Emitter Breakdown Max
12V
Transistor Type
NPN
Supplier Device Package
PG-SOT143-4
Power Max
580mW
Packaging
Tape & Reel (TR)
Package / Case
TO-253-4, TO-253AA
Other Names
BFP 193 E6327 BFP 193 E6327-ND BFP193E6327 BFP193E6327BTSA1 BFP193E6327HTSA1TR BFP193E6327INTR BFP193E6327INTR-ND BFP193E6327XT SP000011024
Operating Temperature
150°C (TJ)
Noise Figure Db Typ F
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Mounting Type
Surface Mount
More in This Category
Browse related parts from the same category — sorted by series, manufacturer, and package similarity. These are not verified pin-to-pin substitutes.
BFP720ESDH6327Infineon TechnologiesPackage / Case: SC-82A, SOT-343 | Supplier Device Package: PG-SOT343-4-2 | Transistor Type: NPN | Frequency - Transition: 43GHz | Voltage - Collector Emitter Breakdown (Max): 4.7V | Current - Collector (Ic) (Max): 30mA | Power - Max: 100mW | Gain: 11dB ~ 30.5dB