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Diodes Incorporated DGD2106MS8-13 Gate Drivers

IC GATE DRV HALF-BRIDGE 8SO 2.5K

15,000 ActiveDiodes Incorporated8-SOIC (0.154", 3.90mm Width)$0.69RoHS
DGD2106MS8-13 - No Image Available

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DGD2106MS8-13
Part Number (MPN)
DGD2106MS8-13
Detailed Description
IC GATE DRV HALF-BRIDGE 8SO 2.5K
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF DGD2106MS8-13 Datasheet
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Technical Specifications

Diodes Incorporated DGD2106MS8-13 Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
10V ~ 20V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH
0.6V, 2.5V

Alternate Parts Comparison (DGD2106MS8-13 vs DGD0227S8-13 vs DGD2003S8-13 vs DGD2181S8-13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)
Supply Voltage10V ~ 20V4.5V ~ 18V10V ~ 20V10V ~ 20V
Channel TypeSynchronousIndependentSynchronousIndependent
Current Peak Output Source Sink290mA, 600mA4A, 4A290mA, 600mA1.9A, 2.3A
Driven ConfigurationHalf-BridgeLow-SideHalf-BridgeHalf-Bridge
Gate TypeIGBT, N-Channel MOSFETIGBT, N-Channel MOSFETN-Channel MOSFETIGBT, N-Channel MOSFET
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Logic Voltage - VIL, VIH0.6V, 2.5V0.7V, 2.4V0.8V, 2.5V0.8V, 2.5V
Number of Drivers2222
Rise Fall Time Typ100ns, 35ns20ns, 20ns70ns, 35ns40ns, 20ns
Action

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