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Broadcom AT-32011-TR2G RF BJT

TRANS NPN BIPO 5.5V 32MA SOT-143

50 ActiveBroadcomTO-253-4, TO-253AARoHS
AT-32011-TR2G - No Image Available

Same model may have multiple batches, images only for reference.

AT-32011-TR2G
Manufacturer
Part Number (MPN)
AT-32011-TR2G
Detailed Description
TRANS NPN BIPO 5.5V 32MA SOT-143
Package
TO-253-4, TO-253AA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF AT-32011-TR2G Datasheet
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Technical Specifications

Broadcom AT-32011-TR2G RF BJT technical specifications.

General

Package / Case
TO-253-4, TO-253AA
Packaging
Tape & Reel (TR)
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage Collector Emitter Breakdown Max
5.5V
Transistor Type
NPN
Power Max
200mW
Noise Figure Db Typ F
1dB ~ 1.3dB @ 900MHz
Gain
12.5dB ~ 14dB
Detailed Description
RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-143

Alternate Parts Comparison (AT-32011-TR2G vs HSG1002VE-TL-E vs AT-30511-TR1G vs AT-41532-TR1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-253-4, TO-253AA4-SMD, Gull WingTO-253-4, TO-253AASC-70, SOT-323
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max32mA35mA8mA50mA
Dc Current Gain Hfe Min IC Vce70 @ 2mA, 2.7V100 @ 5mA, 2V70 @ 1mA, 2.7V30 @ 5mA, 5V
Gain12.5dB ~ 14dB8dB ~ 19.5dB14dB ~ 16dB9dB ~ 15.5dB
Noise Figure Db Typ F1dB ~ 1.3dB @ 900MHz0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz1.1dB ~ 1.4dB @ 900MHz1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
Power Max200mW200mW100mW225mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max5.5V3.5V5.5V12V
Operating Temperature150°C (TJ)--150°C (TJ)150°C (TJ)
Detailed DescriptionRF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-143--RF Transistor NPN 5.5V 8mA 100mW Surface Mount SOT-143RF Transistor NPN 12V 50mA 225mW Surface Mount SC-70-3
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