Toshiba TC58NYG0S3EBAI4 Flash Memory
NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin TFBGA / TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TC58NYG0S3EBAI4
Detailed Description
NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin TFBGA / TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Lifecycle Status
Active
Datasheet
TC58NYG0S3EBAI4 Datasheet
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Technical Specifications
Toshiba TC58NYG0S3EBAI4 Flash Memory technical specifications.
General
Estimated Eol Date
2022
Family
Memory
Family Name
TC58NYG0S3EBAI4
Alternate Parts Comparison (TC58NYG0S3EBAI4 vs TC55NEM208ATGN70 vs TC58128AFTI vs TC58NVM9S3ETA00)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Estimated Eol Date | 2022 | -- | -- | -- |
| Family | Memory | -- | -- | -- |
| Family Name | TC58NYG0S3EBAI4 | -- | -- | -- |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -- | -40 °C ~ 85 °C | -40 °C ~ 85 °C | 0 °C ~ 70 °C |
| Supply Voltage | -- | 5 V | 3.3 V | 3.3 V |
| Interface | -- | Parallel | Parallel, Serial | Serial |
| Number of Pins | -- | 32 | 48 | 48 |
| Access Time | -- | 70 ns | 35 ns | 30 µs |
| Address Bus Width | -- | 19 b | 24 b | 1 b |
| Density | -- | 4 Mb | 128 Mb | 512 Mb |
| Memory Type | -- | RAM, SRAM | FLASH, NAND | NAND, SLC NAND |
| Action |
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