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Toshiba TC55VCM316BTGN55LA SRAM

IC SRAM 8MBIT 55NS 48TSOP

In Stock ActiveToshibaBulkRoHS
TC55VCM316BTGN55LA - No Image Available

Same model may have multiple batches, images only for reference.

TC55VCM316BTGN55LA
Manufacturer
Part Number (MPN)
TC55VCM316BTGN55LA
Detailed Description
IC SRAM 8MBIT 55NS 48TSOP
Package
Bulk
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF TC55VCM316BTGN55LA Datasheet
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Technical Specifications

Toshiba TC55VCM316BTGN55LA SRAM technical specifications.

General

Interface
Parallel
Memory Size
7.6 MB
RoHS
Compliant
Packaging
Bulk
Mounting Type
SMD (SMT)
Operating Temperature
-40 °C ~ 85 °C
Access Time
55 ns
Frequency
55 GHz
Lead Free
Yes
Memory Type
RAM, SRAM

Alternate Parts Comparison (TC55VCM316BTGN55LA vs TC7SH14FU,LJ(CT vs TC7SH04FU,LJ(CT vs TC7SH08FU,LJ(CT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD (SMT)Surface MountSurface MountSurface Mount
Operating Temperature-40 °C ~ 85 °C-40°C ~ 85°C-40°C ~ 85°C-40°C ~ 85°C
Series--TC7SHTC7SHTC7SH
Package / Case--5-TSSOP5-TSSOP5-TSSOP
Supply Voltage--2V ~ 5.5V2V ~ 5.5V2V ~ 5.5V
Current Output High Low--8mA, 8mA8mA, 8mA8mA, 8mA
Current Quiescent Max--2 µA2 µA2 µA
Input Logic Level High--2.2V ~ 3.85V1.5V1.5V
Input Logic Level Low--0.9V ~ 1.65V0.5V0.5V
Logic Type--InverterInverterAND Gate
Max Propagation Delay V Max Cl--10.6ns @ 5V, 50pF7.5ns @ 5V, 50pF7.9ns @ 5V, 50pF
Number of Circuits--111
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