Texas Instruments CSD75205W1015 MOSFETs
P-channel Power MOSFET featuring NexFET process technology.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD75205W1015
Detailed Description
P-channel Power MOSFET featuring NexFET process technology. This dual-configuration transistor operates with a 20V maximum drain-source voltage and 1.2A continuous drain current. Housed in a compact 6-pin DSBGA package (1.3mm x 1.8mm x 0.65mm) with a 0.5mm pin pitch, it offers surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of -6V and a low drain-source on-resistance of 145mOhm at 2.5V.
Package
DSBGA
Key Features
Package: DSBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
CSD75205W1015 Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD75205W1015 MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package
DSBGA
Package Description
Die Size Ball Grid Array
Lead Shape
Ball
Pcb
6
Alternate Parts Comparison (CSD75205W1015 vs CSD43301Q5M vs CSD96371Q5M vs CSD95485RWJT)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) |
| Package / Case | -- | 12-Power LFDFN | 22-PowerLFDFN | 41-PowerTFQFN |
| Supply Voltage | -- | Not Required | 4.5V ~ 5.5V | 4.5V ~ 5.5V |
| Interface | -- | On/Off | PWM | Logic, PWM |
| Fault Protection | -- | UVLO | Shoot-Through, UVLO | Shoot-Through |
| Output Configuration | -- | Low Side | Half Bridge | Half Bridge |
| Voltage Load | -- | 4.5V ~ 6V | 3.3V ~ 13.2V | 5.5V (Max) |
| Action |
Texas Instruments CSD75205W1015 MOSFETs Overview
P-channel Power MOSFET featuring NexFET process technology. This dual-configuration transistor operates with a 20V maximum drain-source voltage and 1.2A continuous drain current. Housed in a compact 6-pin DSBGA package (1.3mm x 1.8mm x 0.65mm) with a 0.5mm pin pitch, it offers surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of -6V and a low drain-source on-resistance of 145mOhm at 2.5V.
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CSD25213W10Texas Instruments-20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm 4-DSBGA -55 to 150
CSD17382F4Texas Instruments30V, N ch NexFET MOSFET™, single LGA 1.0 x 0.6mm, 67mOhm 3-PICOSTAR -55 to 150