Texas Instruments BQ4011MA-200 Memory Integrated Circuit
IC NVSRAM 256KBIT PARALLEL 28DIP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BQ4011MA-200
Detailed Description
IC NVSRAM 256KBIT PARALLEL 28DIP
Package
28-DIP Module (0.61, 15.49mm)
Key Features
Package / Case: 28-DIP Module (0.61, 15.49mm); Mounting Type: Through Hole
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
BQ4011MA-200 Datasheet
Quick Jump:
Technical Specifications
Texas Instruments BQ4011MA-200 Memory Integrated Circuit technical specifications.
General
Interface
Parallel
Memory Size
256Kbit
Data Bus Width
8b
RoHS
Yes
Package / Case
28-DIP Module
Mounting Type
Through Hole
Operating Temperature
0°C ~ 70°C (TA)
Supply Voltage
4.75V ~ 5.5V
Technology
NVSRAM (Non-Volatile SRAM)
Memory Type
Non-Volatile
Alternate Parts Comparison (BQ4011MA-200 vs BQ4013YMA-70N vs BQ4015LYMA-70N vs BQ4010MA-70)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 28-DIP Module | 32-DIP Module | 32-DIP Module | 28-DIP Module |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Supply Voltage | 4.75V ~ 5.5V | 4.5V ~ 5.5V | 3V ~ 3.6V | 4.75V ~ 5.5V |
| Memory Size | 256Kbit | 1Mb (128K x 8) | 4 Mbit | 64Kbit |
| Interface | Parallel | Parallel | Parallel | Parallel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Access Time | 200 ns | 70 ns | 70 ns | 70 ns |
| Memory Format | NVSRAM | NVSRAM | NVSRAM | NVSRAM |
| Memory Interface | Parallel | Parallel | Parallel | Parallel |
| Memory Type | Non-Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Technology | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Action |
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