Samsung Semiconductor K4T51163QG-HCF7000 DRAM
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V Tray
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QG-HCF7000
Detailed Description
Package
--
Key Features
Supply Voltage: 1.8V
Lifecycle Status
Unknown
RoHS State
Compliant
Datasheet
K4T51163QG-HCF7000 Datasheet
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Technical Specifications
Samsung Semiconductor K4T51163QG-HCF7000 DRAM technical specifications.
General
Access Time Max
450ps
Address Bus Width
16b
Density
512Mb
Max Frequency
800MHz
Max Operating Temp
70°C
Min Operating Temp
0°C
Max Supply Voltage
1.9V
Min Supply Voltage
1.7V
Supply Voltage
1.8V
Organization
32MX16
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