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Samsung Semiconductor K4R761869A-GCT9 DRAM

Rambus DRAM, 32MX18, 32ns, CMOS, PBGA92

In StockSamsung SemiconductorRoHS
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K4R761869A-GCT9
Part Number (MPN)
K4R761869A-GCT9
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
PDF K4R761869A-GCT9 Datasheet
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Technical Specifications

Samsung Semiconductor K4R761869A-GCT9 DRAM technical specifications.

General

Number of Pins
92
Min Operating Temp
0
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B92
Number of Words
33554432
Number of Words Code
32000000
Memory IC Type
RAMBUS DRAM
Access Time Max
32
IO Type
COMMON
RoHS
Yes

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