Samsung Semiconductor K4H1G0838M-TCB3 DRAM
DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP-II Tray
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4H1G0838M-TCB3
Detailed Description
Package
TSOP
Key Features
Package / Case: TSOP; Supply Voltage: 2.5V
Lifecycle Status
Unknown
RoHS State
No
Datasheet
K4H1G0838M-TCB3 Datasheet
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Technical Specifications
Samsung Semiconductor K4H1G0838M-TCB3 DRAM technical specifications.
General
Access Time Max
0.7ns
Address Bus Width
16b
Package / Case
TSOP
Data Bus Width
8b
Density
1Gb
Max Frequency
333MHz
Max Operating Temp
70°C
Min Operating Temp
0°C
Supply Voltage
2.5V
Radiation Hardening
No
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