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Samsung Semiconductor K4B8G1646Q-MCK0 DRAM

DDR DRAM, 0.225ns, CMOS, PBGA96,

In StockSamsung SemiconductorRoHS
K4B8G1646Q-MCK0 - No Image Available

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K4B8G1646Q-MCK0
Part Number (MPN)
K4B8G1646Q-MCK0
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
PDF K4B8G1646Q-MCK0 Datasheet
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Technical Specifications

Samsung Semiconductor K4B8G1646Q-MCK0 DRAM technical specifications.

General

Max Operating Temp
85
Number of Pins
96
Min Operating Temp
0
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.5
Supply Current Max
0.251
Memory IC Type
DDR DRAM
Standby Current Max
0.03

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