Samsung Semiconductor K4B2G1646C-HCNB DRAM
DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B2G1646C-HCNB
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
K4B2G1646C-HCNB Datasheet
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Technical Specifications
Samsung Semiconductor K4B2G1646C-HCNB DRAM technical specifications.
General
Max Operating Temp
85
Number of Pins
96
Min Operating Temp
0
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.5
Supply Current Max
0.3
Number of Words
134217728
Number of Words Code
128000000
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