Samsung Semiconductor K4B1G1646G-BCNB DRAM
DDR DRAM, 64MX16, 0.18ns, CMOS, PBGA96
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G1646G-BCNB
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
K4B1G1646G-BCNB Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G1646G-BCNB DRAM technical specifications.
General
Number of Pins
96
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Supply Voltage Nom Vsup
1.5
Number of Words
67108864
Number of Words Code
64000000
Memory IC Type
DDR DRAM
Access Time Max
0.18
Clock Frequency Max Fclk
1066
IO Type
COMMON
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