Samsung Semiconductor K4B1G1646G-BCMA DRAM
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G1646G-BCMA
Detailed Description
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4B1G1646G-BCMA Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G1646G-BCMA DRAM technical specifications.
General
Number of Pins
96
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Supply Voltage Nom Vsup
1.5
Supply Current Max
0.195
Number of Words
67108864
Number of Words Code
64000000
Memory IC Type
DDR DRAM
Standby Current Max
0.01
Access Time Max
0.195
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