Samsung Semiconductor K4B1G1646E-HCK0 DRAM

Name: K4B1G1646E-HCK0
Brand: Samsung Semiconductor
SKU: K4B1G1646E-HCK0
Price: 4.35 USD
Availability: InStock

DDR DRAM, 64MX16, 0.1ns, CMOS, PBGA96,

2,697Samsung Semiconductor$4.35RoHS

Same model may have multiple batches, images only for reference.

K4B1G1646E-HCK0

Manufacturer

Part Number (MPN)

K4B1G1646E-HCK0

Technical Specifications

Samsung Semiconductor K4B1G1646E-HCK0 DRAM technical specifications.

Number of Pins

Terminal Position

BOTTOM

Jedec Package Code

R-PBGA-B96

Supply Voltage Nom Vsup

1.5

Number of Words

67108864

Number of Words Code

64000000

Memory IC Type

DDR DRAM

Access Time Max

0.1

Clock Frequency Max Fclk

800

IO Type

COMMON

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