Samsung Semiconductor K4B1G0846G-BCK0 DRAM
DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G0846G-BCK0
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
K4B1G0846G-BCK0 Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G0846G-BCK0 DRAM technical specifications.
General
Number of Pins
78
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B78
Supply Voltage Nom Vsup
1.5
Supply Current Max
0.135
Number of Words
134217728
Number of Words Code
128000000
Memory IC Type
DDR DRAM
Access Time Max
0.225
Clock Frequency Max Fclk
800
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