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onsemi NE5230DR2G Amplifiers - Instrumentation, OP Amps, Buffer Amps

IC OPAMP GP 1 CIRCUIT 8SOIC

30,650onsemi8-SOIC (0.154", 3.90mm Width)RoHS
NE5230DR2G - No Image Available

Same model may have multiple batches, images only for reference.

NE5230DR2G
Manufacturer
Part Number (MPN)
NE5230DR2G
Detailed Description
IC OPAMP GP 1 CIRCUIT 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF NE5230DR2G Datasheet
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Technical Specifications

onsemi NE5230DR2G Amplifiers - Instrumentation, OP Amps, Buffer Amps technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C
Current Supply
1.1mA
Output Type
Rail-to-Rail
Number of Circuits
1
Amplifier Type
General Purpose
Current Output Channel
32 mA
Slew Rate
0.25V/µs
Gain Bandwidth Product
600 kHz

Alternate Parts Comparison (NE5230DR2G vs SC358DR2G vs SC2904VDR2G vs LM2904DR2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature0°C ~ 70°C0°C ~ 70°C-40°C ~ 85°C-40°C ~ 85°C
Amplifier TypeGeneral PurposeGeneral PurposeGeneral PurposeGeneral Purpose
Current Output Channel32 mA40 mA40 mA40 mA
Number of Circuits1222
Voltage Input Offset400 µV2 mV2 mV2 mV
Voltage Supply Span Max15 V32 V26 V26 V
Voltage Supply Span Min1.8 V3 V3 V3 V
Current Input Bias40 nA--45 nA45 nA
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