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onsemi N21C21ASNDT3G Memory Integrated Circuit

IC EPROM 1KBIT 1-WIRE SOT23-3

50,400 ActiveonsemiTO-236-3, SC-59, SOT-23-3$0.35RoHS
N21C21ASNDT3G - No Image Available

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N21C21ASNDT3G
Manufacturer
Part Number (MPN)
N21C21ASNDT3G
Detailed Description
IC EPROM 1KBIT 1-WIRE SOT23-3
Package
TO-236-3, SC-59, SOT-23-3
Key Features
Package / Case: TO-236-3, SC-59, SOT-23-3; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF N21C21ASNDT3G Datasheet
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Technical Specifications

onsemi N21C21ASNDT3G Memory Integrated Circuit technical specifications.

General

Interface
Serial-1Wire
Memory Size
1Kb (128 x 8)
RoHS
Compliant
Number of Pins
3
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
2.65V ~ 5.5V
Lifecycle Status
Active
Technology
EPROM - OTP

Alternate Parts Comparison (N21C21ASNDT3G vs NM27C020QE120 vs NM27LV010T250 vs NM27C256V100)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-332-CDIP32-TFSOP32-LCC
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
Operating Temperature-40°C ~ 85°C (TA)-40°C ~ 85°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)
Supply Voltage2.65V ~ 5.5V4.5V ~ 5.5V3V ~ 3.6V4.5V ~ 5.5V
Memory Size1Kb (128 x 8)2Mb (256K x 8)1Mb (128K x 8)256Kb (32K x 8)
Memory FormatEPROMEPROMEPROMEPROM
Memory Interface1-Wire®ParallelParallelParallel
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
TechnologyEPROM - OTPEPROM - UVEPROM - OTPEPROM - OTP
Access Time--120 ns250 ns100 ns
Action

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