Nexperia PESD1LVDS,115 TVS Diodes
10-pin DFN package transient voltage suppressor diode for ultra high-speed interface ESD protection.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PESD1LVDS,115
Category
Detailed Description
10-pin DFN package transient voltage suppressor diode for ultra high-speed interface ESD protection. Features a unidirectional silicon diode element with a maximum repetitive peak reverse voltage of 5.5V and a breakdown voltage range of 6V to 9V. Operates across a temperature range of -40°C to 85°C.
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PESD1LVDS,115 Datasheet
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Technical Specifications
Nexperia PESD1LVDS,115 TVS Diodes technical specifications.
General
RoHS
Yes
Number of Pins
10
Operating Temperature
-40 ~ 85
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage Max
5.5
Breakdown Voltage Min
6
Alternate Parts Comparison (PESD1LVDS,115 vs PESD5V0S1UA,115 vs PESD15VL2BT,215 vs PESD2CAN,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -40 ~ 85 | -55 °C ~ 150 °C | -65 ~ 150 | -55 ~ 150 |
| Number of Pins | 10 | 2 | 3 | 3 |
| Number of Elements | 1 | 1 | 2 | 2 |
| Polarity | UNIDIRECTIONAL | Unidirectional | BIDIRECTIONAL | BIDIRECTIONAL |
| Breakdown Voltage Max | 9 | -- | 20.3 | 30.3 |
| Breakdown Voltage Min | 6 | -- | 17.1 | 26.2 |
| Diode Element Material | SILICON | -- | SILICON | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | -- | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
| Military Spec | False | -- | False | False |
| Rep Pk Reverse Voltage Max | 5.5 | -- | 15 | 24 |
| Terminal Position | DUAL | -- | DUAL | DUAL |
| Action |
Nexperia PESD1LVDS,115 TVS Diodes Overview
10-pin DFN package transient voltage suppressor diode for ultra high-speed interface ESD protection. Features a unidirectional silicon diode element with a maximum repetitive peak reverse voltage of 5.5V and a breakdown voltage range of 6V to 9V. Operates across a temperature range of -40°C to 85°C.
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