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Nexperia PDTB113ZT,215 BJTs

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

1,045,762 ActiveNexperiaTO-236-3$0.01RoHS
PDTB113ZT,215 Nexperia

Same model may have multiple batches, images only for reference.

PDTB113ZT,215
Manufacturer
Part Number (MPN)
PDTB113ZT,215
Detailed Description
Industrial-grade BJTs by Nexperia with reliable operational specs.
Package
TO-236-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF PDTB113ZT,215 Datasheet
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Technical Specifications

Nexperia PDTB113ZT,215 BJTs technical specifications.

General

RoHS
Compliant
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-65 °C ~ 150 °C
Lifecycle Status
Production
Manufacturer Lifecycle Status
RELEASED FOR SUPPLY
Package
TO-236-3
Contact Plating
Tin
Weight
4.535924 g
Collector Emitter Breakdown Voltage
50 V

Alternate Parts Comparison (PDTB113ZT,215 vs PDTB113ZQAZ vs PDTB123ET,215 vs PDTB114ETR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface Mount------
Operating Temperature-65 °C ~ 150 °C------
Number of Pins3------
RoHSCompliant------
Lifecycle StatusProduction------
China ROHSCompliant------
Collector Emitter Breakdown Voltage50 V------
Collector Emitter Voltage Vceo50 V------
Contact PlatingTin------
Element ConfigurationSingle------
Height6.35 mm------
Hfe Min70------
Action

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