Nexperia NX1029X,115 Transistors
6-pin Trench MOSFET offering 60V drain-source voltage and 330mA continuous drain current for N-channel operation, and 50V drain-source voltage with 170mA continuous drain curren…
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Manufacturer
Part Number (MPN)
NX1029X,115
Category
Detailed Description
6-pin Trench MOSFET offering 60V drain-source voltage and 330mA continuous drain current for N-channel operation, and 50V drain-source voltage with 170mA continuous drain current for P-channel operation. This JFET is housed in a SOT package, providing efficient switching and amplification capabilities.
Lifecycle Status
Active
Datasheet
NX1029X,115 Datasheet
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Technical Specifications
Nexperia NX1029X,115 Transistors technical specifications.
General
Number of Pins
6
Military Spec
False
Alternate Parts Comparison (NX1029X,115 vs 2N7002P,235 vs BSH205G2 vs 2N7002BKS,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Number of Pins | 6 | 3 | 3 | 6 |
| Military Spec | False | False | False | False |
| Number of Elements | -- | 1 | 1 | 2 |
| Terminal Position | -- | DUAL | DUAL | DUAL |
| Operating Temperature | -- | -55 ~ 150 | -- | -55 ~ 150 |
| Jedec Package Code | -- | TO-236AB | TO-236AB | -- |
| Action |
Nexperia NX1029X,115 Transistors Overview
6-pin Trench MOSFET offering 60V drain-source voltage and 330mA continuous drain current for N-channel operation, and 50V drain-source voltage with 170mA continuous drain current for P-channel operation. This JFET is housed in a SOT package, providing efficient switching and amplification capabilities.
More Parts in Transistors
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
2N7002P,235NexperiaN-channel Trench MOSFET, a 3-terminal electronic component, operates within a temperature range of -55°C to 150°C.
BSH203,215NexperiaP-channel vertical D-MOS logic level FET, TO-236 package, 3-terminal device with dual terminal position.