Nexperia BAS16L,315 Rectifier Diodes
High-speed switching rectifier diode, featuring a 2-pin DFN package with bottom terminal position.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BAS16L,315
Detailed Description
High-speed switching rectifier diode, featuring a 2-pin DFN package with bottom terminal position. This silicon diode offers a maximum repetitive peak reverse voltage of 100V and a maximum power dissipation of 0.25W. Operating across a wide temperature range from -65°C to 150°C, it is designed for efficient switching applications.
Lifecycle Status
Active
Datasheet
BAS16L,315 Datasheet
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Technical Specifications
Nexperia BAS16L,315 Rectifier Diodes technical specifications.
General
Number of Pins
2
Operating Temperature
-65 ~ 150
Terminal Position
BOTTOM
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage Max
100
Power Dissipation Max
0.25
Military Spec
False
Alternate Parts Comparison (BAS16L,315 vs BAS16/CH,235 vs BAS20/B,215 vs BAS16/B,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65 ~ 150 | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Number of Pins | 2 | 3 | 3 | 3 |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| AEC Qualified | -- | Yes | Yes | Yes |
| Automotive | -- | Yes | Yes | Yes |
| Basic Package Type | -- | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT |
| Cage Code | -- | H2HX9 | H2HX9 | H2HX9 |
| Configuration | -- | Single | Single | Single |
| Forward Voltage | -- | [email protected]V | 1.25V | [email protected]V |
| Jedec | -- | TO-236AB | TO-236AB | TO-236AB |
| Lead Shape | -- | Gull-wing | Gull-wing | Gull-wing |
| Max Forward Current | -- | 0.215A | 0.2A | 0.215A |
| Action |
Nexperia BAS16L,315 Rectifier Diodes Overview
High-speed switching rectifier diode, featuring a 2-pin DFN package with bottom terminal position. This silicon diode offers a maximum repetitive peak reverse voltage of 100V and a maximum power dissipation of 0.25W. Operating across a wide temperature range from -65°C to 150°C, it is designed for efficient switching applications.
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