Microsemi MS1001 RF BJT
RF TRANS NPN 18V 30MHZ M174
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MS1001
Detailed Description
Package
M174
Key Features
Package / Case: M174 | Supplier Device Package: M174 | Transistor Type: NPN | Frequency - Transition: 30MHz | Voltage - Collector Emitter Breakdown (Max): 18V | Current - Collector (Ic) (Max): 20A | Power - Max: 270W | Gain: 13dB
Lifecycle Status
Active
RoHS State
Unknown
Datasheet
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Technical Specifications
Microsemi MS1001 RF BJT technical specifications.
General
Voltage Collector Emitter Breakdown Max
18V
Transistor Type
NPN
Supplier Device Package
M174
Power Max
270W
Package / Case
M174
Package
Bulk
Operating Temperature
200°C (TJ)
Mounting Type
Chassis Mount
Gain
13dB
Frequency Transition
30MHz
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