Micron Technology Inc. NAND01GW3B2BN6E Flash Memory
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NAND01GW3B2BN6E
Detailed Description
Package
TSOP
Key Features
Package: SO; Mounting Type: Surface Mount; Supply Voltage: 3/3.3; Memory Size: 1G; Interface: Parallel
Lifecycle Status
Obsolete
RoHS State
Compliant
Datasheet
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Technical Specifications
Micron Technology Inc. NAND01GW3B2BN6E Flash Memory technical specifications.
General
Program Current Ma
30
HTS
8542.32.00.71
ECCN
3A991b.1.a.
Programming Voltage V
2.7 to 3.6
Ppap
No
Operating Current Ma
30
Automotive
No
Command Compatible
Yes
Address Bus Width Bit
28
Min Operating Temp
-40
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