Micron Technology Inc. NAND01GW3B2BN6E Flash Memory
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NAND01GW3B2BN6E
Detailed Description
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48-Pin TSOP Tray
Package
TSOP
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
NAND01GW3B2BN6E Datasheet
Quick Jump:
Technical Specifications
Micron Technology Inc. NAND01GW3B2BN6E Flash Memory technical specifications.
General
Interface
Parallel
Memory Size
1G
RoHS
Compliant
Number of Pins
48
Mounting Type
Surface Mount
Operating Temperature
-40 ~ 85
Supply Voltage
3/3.3
Lifecycle Status
Obsolete
Program Current Ma
30
Programming Voltage V
2.7 to 3.6
Alternate Parts Comparison (NAND01GW3B2BN6E vs MT29F4G08AACWC-ET:C vs MT29F16G08CBABAWP:B vs MT29F64G08AFAAAWP-ITZ:A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD (SMT) | Surface Mount | Surface Mount |
| Operating Temperature | -40 ~ 85 | -40 °C ~ 85 °C | 0 °C ~ 70 °C | -40°C ~ 85°C (TA) |
| Supply Voltage | 3/3.3 | 3.3 V | 3.3 V | 2.7V ~ 3.6V |
| Number of Pins | 48 | 48 | 48 | 48 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Package | SO | TSOP | TSOP | SO |
| Memory Size | 1G | -- | 1.9 GB | 64G |
| Memory Type | -- | NAND, SLC NAND | MLC NAND | Non-Volatile |
| Action |
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