Infineon Technologies CY7C1041DV33-10ZSXI SRAM
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II Tray / IC SRAM 4MBIT 10NS 44TSOP

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CY7C1041DV33-10ZSXI
Detailed Description
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II Tray / IC SRAM 4MBIT 10NS 44TSOP
Package
Tray
Lifecycle Status
Active
Datasheet
CY7C1041DV33-10ZSXI Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies CY7C1041DV33-10ZSXI SRAM technical specifications.
General
Memory Size
4Mb (256K x 16)
Package / Case
44-TSOP
Packaging
Tray
Mounting Type
SMD (SMT)
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
3V ~ 3.6V
Lifecycle Status
Obsolete(EOL)
Estimated Eol Date
Obsolete / End of life
Supply Voltage Operating
3 V to 3.6 V
Introduction Date
July 13, 1996
Alternate Parts Comparison (CY7C1041DV33-10ZSXI vs CY7C1420SV18-250BZC vs CY7C1380S-167AXC vs CY7C1460SV25-250BZC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 44-TSOP | 165-LBGA | 100-LQFP | 165-LBGA |
| Mounting Type | SMD (SMT) | SMD (SMT) | SMD | SMD (SMT) |
| Operating Temperature | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) | 0°C ~ 70°C (TA) | 0°C ~ 70°C (TA) |
| Supply Voltage | 3V ~ 3.6V | 1.7V ~ 1.9V | 3.135 V ~ 3.6 V | 2.375V ~ 2.625V |
| Memory Size | 4Mb (256K x 16) | 36Mb (1M x 36) | 18Mb (512K x 36) | 36Mb (1M x 36) |
| Lifecycle Status | Obsolete(EOL) | Obsolete(EOL) | Obsolete(EOL) | Obsolete(EOL) |
| Memory Format | SRAM | SRAM | SRAM | SRAM |
| Memory Interface | Parallel | Parallel | Parallel | Parallel |
| Memory Type | Volatile | Volatile | Volatile | Volatile |
| Technology | SRAM - Asynchronous | SRAM - Synchronous, DDR II | SRAM - Synchronous | SRAM - Synchronous |
| Access Time | 10ns | -- | 3.4ns | 2.6ns |
| Supply Voltage Operating | 3 V to 3.6 V | 1.7 V to 1.9 V | -- | 2.375 V to 2.625 V |
| Action |
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