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Diodes Incorporated DGD05473FNQ-7 Microcontrollers

IC GATE DRV HALF-BRDG DFN3030-10

180,000 ActiveDiodes Incorporated10-UFDFN Exposed Pad$1.16
DGD05473FNQ-7 - No Image Available

Same model may have multiple batches, images only for reference.

DGD05473FNQ-7
Part Number (MPN)
DGD05473FNQ-7
Detailed Description
IC GATE DRV HALF-BRDG DFN3030-10
Package
10-UFDFN Exposed Pad
Lifecycle Status
Active
Datasheet
PDF DGD05473FNQ-7 Datasheet
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Technical Specifications

Diodes Incorporated DGD05473FNQ-7 Microcontrollers technical specifications.

General

Package / Case
10-UFDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Supply Voltage
4.7V ~ 14V
Input Type
CMOS/TTL
Channel Type
Independent
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Logic Voltage - VIL, VIH
0.8V, 2.4V

Alternate Parts Comparison (DGD05473FNQ-7 vs DGD0636MS28-13 vs DGD21064MS14-13 vs DGD0506AFN-7)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case10-UFDFN Exposed Pad28-SOIC14-SOIC10-WFDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)
Supply Voltage4.7V ~ 14V10V ~ 20V10V ~ 20V8V ~ 14V
Channel TypeIndependent3-PhaseIndependentSynchronous
Current Peak Output Source Sink1.5A, 2.5A200mA, 350mA290mA, 600mA1.5A, 2A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETIGBT, N-Channel MOSFETIGBT, N-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap50 V100 V600 V50 V
Input TypeCMOS/TTLInvertingNon-InvertingCMOS/TTL
Logic Voltage - VIL, VIH0.8V, 2.4V0.8V, 2.4V0.6V, 2.5V0.8V, 2.4V
Number of Drivers2622
Action

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