Analog Devices DS2704RQC1A+T10 Memory Integrated Circuit
INTEGRATED CIRCUIT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DS2704RQC1A+T10
Detailed Description
INTEGRATED CIRCUIT
Package
8-WFDFN Exposed Pad
Key Features
Package / Case: 8-WFDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
DS2704RQC1A+T10 Datasheet
Quick Jump:
Technical Specifications
Analog Devices DS2704RQC1A+T10 Memory Integrated Circuit technical specifications.
General
Memory Size
1.25Kb (32 Bytes x 5 pages)
Package / Case
8-WFDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-30°C ~ 85°C (TA)
Supply Voltage
2.5V ~ 5.5V
Technology
EEPROM
Memory Type
Non-Volatile
Memory Format
EEPROM
Memory Interface
1-Wire®
Write Cycle Time Word Page
1µs
Alternate Parts Comparison (DS2704RQC1A+T10 vs DS1230Y-120+ vs DS1220AB-200IND+ vs DS1225AB-70+)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-WFDFN Exposed Pad | 28-DIP Module | 24-DIP Module | 28-DIP Module |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -30°C ~ 85°C (TA) | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Supply Voltage | 2.5V ~ 5.5V | 4.5V ~ 5.5V | 4.75V ~ 5.25V | 4.75V ~ 5.25V |
| Memory Size | 1.25Kb (32 Bytes x 5 pages) | 256Kb (32K x 8) | 16Kbit | 64Kbit |
| Memory Format | EEPROM | NVSRAM | NVSRAM | NVSRAM |
| Memory Interface | 1-Wire® | Parallel | Parallel | Parallel |
| Memory Type | Non-Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Technology | EEPROM | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Write Cycle Time Word Page | 1µs | 120ns | 200ns | 70ns |
| Interface | -- | Parallel | Parallel | Parallel |
| Number of Pins | -- | 28 | 24 | 28 |
| Action |
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