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Analog Devices DS24B33+T&R Memory ICs

IC EEPROM 4KBIT 1-WIRE TO92-3

43,822 ActiveAnalog DevicesTO-226-3, TO-92-3 (TO-226AA) Formed Leads$1.55RoHS
DS24B33+T&R - No Image Available

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DS24B33+T&R
Manufacturer
Part Number (MPN)
DS24B33+T&R
Detailed Description
High-performance Analog Devices Memory ICs for stable electronic control.
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF DS24B33+T&R Datasheet
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Technical Specifications

Analog Devices DS24B33+T&R Memory ICs technical specifications.

General

Memory Size
4Kb (256 x 16)
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
2.8V ~ 5.25V
Technology
EEPROM
Memory Type
Non-Volatile
Access Time
2 µs
Memory Format
EEPROM
Memory Interface
1-Wire®

Alternate Parts Comparison (DS24B33+T&R vs DS2430A+T&R vs DS2430A/T&R vs DS1230Y-120+)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3TO-226-3, TO-92-3TO-226-3, TO-92-328-DIP Module
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-40°C ~ 85°C (TA)-40°C ~ 85°C (TA)-40°C ~ 85°C (TA)0°C ~ 70°C (TA)
Memory Size4Kb (256 x 16)256b (32 x 8)256b (32 x 8)256Kb (32K x 8)
Access Time2 µs15 µs15 µs120 ns
Memory FormatEEPROMEEPROMEEPROMNVSRAM
Memory Interface1-Wire®1-Wire®1-Wire®Parallel
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
TechnologyEEPROMEEPROMEEPROMNVSRAM (Non-Volatile SRAM)
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