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Analog Devices DS1265AB-100+ Memory Integrated Circuit

IC NVSRAM 8M PARALLEL 36EDIP

1,563 ActiveAnalog Devices36-DIP Module (0.610", 15.49mm)RoHS
DS1265AB-100+ - No Image Available

Same model may have multiple batches, images only for reference.

DS1265AB-100+
Manufacturer
Part Number (MPN)
DS1265AB-100+
Detailed Description
IC NVSRAM 8M PARALLEL 36EDIP
Package
36-DIP Module (0.610", 15.49mm)
Key Features
Package / Case: 36-DIP Module (0.610", 15.49mm); Mounting Type: Through Hole
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF DS1265AB-100+ Datasheet
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Technical Specifications

Analog Devices DS1265AB-100+ Memory Integrated Circuit technical specifications.

General

Interface
Parallel
Memory Size
8Mb (1M x 8)
RoHS
Compliant
Number of Pins
36
Package / Case
36-DIP Module
Mounting Type
Through Hole
Operating Temperature
0°C ~ 70°C (TA)
Supply Voltage
4.75V ~ 5.25V
Lifecycle Status
LTB
Technology
NVSRAM (Non-Volatile SRAM)

Alternate Parts Comparison (DS1265AB-100+ vs DS1265W-100 vs DS1265W-100+ vs DS1265AB-70IND)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case36-DIP Module36-DIP Module36-DIP Module36-DIP Module
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature0°C ~ 70°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)-40°C ~ 85°C (TA)
Supply Voltage4.75V ~ 5.25V3V ~ 3.6V3V ~ 3.6V4.75V ~ 5.25V
Memory Size8Mb (1M x 8)8Mb (1M x 8)8Mb (1M x 8)8Mb (1M x 8)
Access Time100 ns100 ns100 ns70 ns
Memory FormatNVSRAMNVSRAMNVSRAMNVSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
TechnologyNVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)
Write Cycle Time Word Page100ns100ns100ns70ns
RoHSCompliant--ROHS3 CompliantRoHS non-compliant
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