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Analog Devices DS1250W-100 Memory Integrated Circuit

IC NVSRAM 4MBIT PARALLEL 32EDIP

12,113Analog Devices32-DIP Module (0.600", 15.24mm)RoHS
DS1250W-100 - No Image Available

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DS1250W-100
Manufacturer
Part Number (MPN)
DS1250W-100
Detailed Description
IC NVSRAM 4MBIT PARALLEL 32EDIP
Package
32-DIP Module (0.600", 15.24mm)
Key Features
Package / Case: 32-DIP Module (0.600", 15.24mm); Mounting Type: Through Hole
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF DS1250W-100 Datasheet
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Technical Specifications

Analog Devices DS1250W-100 Memory Integrated Circuit technical specifications.

General

Memory Size
4Mb (512K x 8)
Package / Case
32-DIP Module
Mounting Type
Through Hole
Operating Temperature
0°C ~ 70°C (TA)
Supply Voltage
3V ~ 3.6V
Technology
NVSRAM (Non-Volatile SRAM)
Memory Type
Non-Volatile
Access Time
100 ns
Memory Format
NVSRAM
Memory Interface
Parallel

Alternate Parts Comparison (DS1250W-100 vs DS1249Y-70# vs DS1245AB-120+ vs DS1250AB-70+)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case32-DIP Module32-DIP Module32-DIP Module32-DIP Module
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature0°C ~ 70°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)
Supply Voltage3V ~ 3.6V4.5V ~ 5.5V4.75V ~ 5.25V4.75V ~ 5.25V
Memory Size4Mb (512K x 8)2Mb (256K x 8)1Mb (128K x 8)4Mb (512K x 8)
Access Time100 ns70 ns120 ns70 ns
Memory FormatNVSRAMNVSRAMNVSRAMNVSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
TechnologyNVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)
Write Cycle Time Word Page100ns70ns120ns70ns
Interface--ParallelParallelParallel
Action

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