Texas Instruments BQ4011YMA-100 SRAM
256Kb Non-Volatile SRAM, 100ns, 32Kx8, Parallel, DIP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BQ4011YMA-100
Detailed Description
256Kb Non-Volatile SRAM, 100ns, 32Kx8, Parallel, DIP
Package
DIP
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
BQ4011YMA-100 Datasheet
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Technical Specifications
Texas Instruments BQ4011YMA-100 SRAM technical specifications.
General
Access Time
100ns
Access Time Max
100ns
Package / Case
DIP
Data Bus Width
8b
Density
256Kb
Frequency
100GHz
Interface
Parallel
Lead Free
Contains Lead
Max Operating Temp
70°C
Max Supply Voltage
5.5V
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