Renesas R1EV58064BDANBI#B2 Memory Integrated Circuit
IC EEPROM 64KB C-MOS 28DIP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
R1EV58064BDANBI#B2
Detailed Description
Package
28-DIP (0.600", 15.24mm)
Key Features
Package / Case: 28-DIP (0.600", 15.24mm); Mounting Type: Through Hole
Lifecycle Status
Last Time Buy
RoHS State
Compliant
Datasheet
R1EV58064BDANBI#B2 Datasheet
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Technical Specifications
Renesas R1EV58064BDANBI#B2 Memory Integrated Circuit technical specifications.
General
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Through Hole
Package / Case
28-DIP (0.600", 15.24mm)
Technology
EEPROM
Supplier Device Package
28-DIP
Memory Size
64Kb (8K x 8)
Memory Type
Non-Volatile
Supply Voltage
2.7V ~ 5.5V
Access Time
100 ns
Memory Format
EEPROM
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