onsemi MJD3055T4G BJTs
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD3055T4G
Detailed Description
Package
DPAK
Lifecycle Status
Production
RoHS State
Compliant
Datasheet
MJD3055T4G Datasheet
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Technical Specifications
onsemi MJD3055T4G BJTs technical specifications.
General
Country of Origin
Mainland China
Export Control Classification Number ECCN Code
EAR99
Introduction Date
1991-06-01
Lifecycle Status
Production
Manufacturer Lifecycle Status
ACTIVE
Package
DPAK
Number of Pins
3
Weight
4.535924 g
Collector Base Voltage Vcbo
70 V
Collector Emitter Breakdown Voltage
60 V
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