Nexperia BSH205G2R Transistors
P-channel Trench MOSFET, 20 V drain-source voltage, housed in a TO-236AB package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSH205G2R
Category
Base Model
Detailed Description
Package
--
Lifecycle Status
Active
RoHS State
Unknown
Datasheet
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Technical Specifications
Nexperia BSH205G2R Transistors technical specifications.
General
Number of Pins
3
Inventory Source
Winsource
Terminal Position
DUAL
Inventory Source File
/Volumes/T7 Shield/电子元器件数据/抓取的数据/Win-Source数据/winsource_未曾下架数据_202605_1.xlsx
Jedec Package Code
TO-236AB
Inventory As of
2026-05-16
Number of Elements
1
Source Manufacturer
Nexperia USA Inc.
Reach
Compliant
Source Category
Discrete Semiconductor Products > TRANSISTORS > Transistors - FETs, MOSFETs - RF
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BSH205G2ARNexperiaSmall Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB