Central Semiconductor CM5583 RF BJT
RF TRANSISTOR TO-39
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CM5583
Detailed Description
RF TRANSISTOR TO-39
Package
TO-205AD, TO-39-3 Metal Can
Lifecycle Status
Active
Datasheet
CM5583 Datasheet
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Technical Specifications
Central Semiconductor CM5583 RF BJT technical specifications.
General
Voltage Collector Emitter Breakdown Max
30V
Transistor Type
PNP
Supplier Device Package
TO-39
Power Max
1W
Package / Case
TO-205AD, TO-39-3 Metal Can
Package
Bulk
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Frequency Transition
1.3GHz
Dc Current Gain Hfe Min IC Vce
25 @ 100mA, 2V
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CP302-MPSH10-CTCentral SemiconductorPackage / Case: Die | Supplier Device Package: Die | Transistor Type: NPN | Frequency - Transition: 650MHz | Voltage - Collector Emitter Breakdown (Max): 25V | Power - Max: 350mW | Mounting Type: Surface Mount